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Because the luminescence of scintillator by X-ray irradiation scatters, the spatial resolution of scintillator type imaging detector is not so high. The silicon substrate was procced to make small pixel holes by microfabrication technique. The pixel holes can completely obtain optical separation for visible light as a result of X-ray scintillation. And, it is easy to increase the size of silicon substrate and we can get this large size silicon wafers up to diameter of 30 cm with high precision semiconductor process. In this paper, the purpose is evaluation the scintillator with Si pixel collimator as a scintillator type X-ray imaging detector. First, the conditions for deposition the scintillator into the pixel holes were confirmed. For this purpose, the measurements that evaluate property of CsI:Tl were conducted such as ICP, XRD, spectrometer. From this measurement, the conditions of deposition CsI:Tl were determined. Next, CsI:Tl was deposited with this condition and irradiated X-ray. The spatial frequency of light emission at this time was evaluate by edge method using tungsten plate. From this result, the deposition of the scintillator in the Si pixel structures using the melting method led to the improvement of the spatial resolution of the scintillator type X-ray imaging detector.
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