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The results of investigation of optical and electrical properties of thin films of р-(3ZnTe)0.5(In2Te3)0.5 obtained by thermal evaporation and heterostructures based on them are presented in the paper. On the basis of the analysis of the spectra of light absorption, the optical width of the band gap and its dependence on the sputtering mode is determined. The heterostructures of n-Si/p-(3ZnTe)0.5(In2Te3)0.5 and n-CdTe/p-(3ZnTe)0.5(In2Te3)0.5 were obtained and they have straightening properties. Based on the analysis of the temperature dependences of the I-V characteristics, the presence of a tunneling mechanism of electron motion at forward and reverse bias through the energy barrier of the heterojunction is established.
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Ivan P. Koziarskyi, Eduard V. Maistruk, Dmytro P. Koziarskyi, Galyna O. Andrushchak, Taras T. Kovaliuk, "Heterostructures on the basis of thin films (3ZnTe)0.5(In2Te3)0.5," Proc. SPIE 11369, Fourteenth International Conference on Correlation Optics, 113691A (6 February 2020); https://doi.org/10.1117/12.2553219