Paper
24 April 2020 Stress analysis of Si chip sidewalls using micro-Raman spectroscopy
M. De Biasio, M. Kraft, R. Ong, C. Seifert, M. Ossiander, B. Bernard, M. Roesner
Author Affiliations +
Abstract
Raman spectroscopy was used to estimate stress in the sidewalls of silicon chips and predict the chips' breaking stress. Silicon wafers were diced using four methods; the breaking stress of the resulting chips was measured mechanically and compared with stress measurements made using Raman spectroscopy. The stress measure- ments made by Raman spectroscopy were loosely correlated with the breaking stress. We conclude that Raman spectroscopy is a promising technique for predicting breaking stress, but requires further development before it can be applied commercially.
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M. De Biasio, M. Kraft, R. Ong, C. Seifert, M. Ossiander, B. Bernard, and M. Roesner "Stress analysis of Si chip sidewalls using micro-Raman spectroscopy", Proc. SPIE 11390, Next-Generation Spectroscopic Technologies XIII, 1139015 (24 April 2020); https://doi.org/10.1117/12.2557033
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KEYWORDS
Raman spectroscopy

Silicon

Laser processing

Calibration

Micro raman spectroscopy

Microscopes

Semiconductor lasers

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