High line density fused silica transmission gratings by deep reactive ion beam etching for ultra-short pulse laser compression

Yanan Wang; Zhiwen Chen; Keqiang Qiu; Zhengkun Liu; Yilin Hong; Xiangdong Xu

doi:10.1117/12.2551974

31 January 2020 High line density fused silica transmission gratings by deep reactive ion beam etching for ultra-short pulse laser compression

Yanan Wang, Zhiwen Chen, Keqiang Qiu, Zhengkun Liu, Yilin Hong, Xiangdong Xu

Author Affiliations +

Proceedings Volume 11427, Second Target Recognition and Artificial Intelligence Summit Forum; 114271U (2020) https://doi.org/10.1117/12.2551974
Event: Second Target Recognition and Artificial Intelligence Summit Forum, 2019, Changchun, China

Abstract

In this note, we present our results about the process design and characterization of deep reactive ion beam etching of high line density fused silica transmission gratings. Up to 1 μm deep and 1880 lines/mm microstructures have been successfully fabricated for 532nm ultrashort pulse laser pulse compression using the developed processes. Considering the requirements of the manufacturing process, a certain range of parameters needs to be determined to reduce the need for etching precision. Therefore, in this paper, the strict coupling wave method is used to determine the parameter range of the grating in the range of the calculated grating parameters, and the diffraction efficiency of the simplified mode method can be calculated. To our knowledge, this is the first note on the design parameters of transmission pulse compression grating made on fused quartz substrate are given using the simplified mode method to design and a non-ICP-based reactive ion etcher.

Citation Download Citation

Yanan Wang, Zhiwen Chen, Keqiang Qiu, Zhengkun Liu, Yilin Hong, and Xiangdong Xu "High line density fused silica transmission gratings by deep reactive ion beam etching for ultra-short pulse laser compression", Proc. SPIE 11427, Second Target Recognition and Artificial Intelligence Summit Forum, 114271U (31 January 2020); https://doi.org/10.1117/12.2551974

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