Pumping Requirements And Options For Molecular Beam Epitaxy And Gas Source Molecular Beam Epitaxy/Chemical Beam Epitaxy

M. J. McCollum; M. A. Plano; M. A. Haase; V. M. Robbins; S. L. Jackson; K. Y. Cheng; G. E. Stillman

doi:10.1117/12.961995

28 November 1989 Pumping Requirements And Options For Molecular Beam Epitaxy And Gas Source Molecular Beam Epitaxy/Chemical Beam Epitaxy

M. J. McCollum, M. A. Plano, M. A. Haase, V. M. Robbins, S. L. Jackson, K. Y. Cheng, G. E. Stillman

Author Affiliations +

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961995
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

The current high level of interest in the growth of InP/InGaAsP/InGaAs lattice matched to InP, has influenced many researchers to consider the use of gas sources in growth by MBE. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with higher p-type mobilities than previously reported have been grown with a diffusion pumped molecular beam epitaxial system. This demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy.

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M. J. McCollum, M. A. Plano, M. A. Haase, V. M. Robbins, S. L. Jackson, K. Y. Cheng, and G. E. Stillman "Pumping Requirements And Options For Molecular Beam Epitaxy And Gas Source Molecular Beam Epitaxy/Chemical Beam Epitaxy", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.961995

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