FTIR External Reflection Study Of Molecular Orientation On Semiconductors

Jerzy Mielczarski

doi:10.1117/12.969561

1 December 1989 FTIR External Reflection Study Of Molecular Orientation On Semiconductors

Jerzy Mielczarski

Proceedings Volume 1145, 7th Intl Conf on Fourier Transform Spectroscopy; (1989) https://doi.org/10.1117/12.969561
Event: Seventh International Conference on Fourier and Computerized Infrared Spectroscopy, 1989, Fairfax, VA, United States

Abstract

An infrared external reflection technique has been developed to study the structure of spontaneously adsorbed layers of surfactants on semiconductor (cuprous sulfide) from aqueous solution. Owing to the optical properties of the substrate, positive as well as negative absorption bands are observed in the spectrum depending on the angle of incidence and the polarization. Knowledge of the three theoretically calculated absorbance components, AIIX, A2z and Aiy, makes it possible to predict the absorbance values which match with experimental data and provides for an easier interpretation of the reflection spectra, especially for the case of an anisotropic layer. Generally good agreement has been obtained between experimental and calculated absorbance values.

Citation Download Citation

Jerzy Mielczarski "FTIR External Reflection Study Of Molecular Orientation On Semiconductors", Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); https://doi.org/10.1117/12.969561

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