Paper
9 April 2020 Strained superlattices InGaAs/InAlAs with ultrashort photocarrier lifetime
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Proceedings Volume 11457, Saratov Fall Meeting 2019: Optical and Nano-Technologies for Biology and Medicine; 114571A (2020) https://doi.org/10.1117/12.2560460
Event: Saratov Fall Meeting 2019: VII International Symposium on Optics and Biophotonics, 2019, Saratov, Russian Federation
Abstract
We report on a novel-designed superlattice (SL) InGaAs/InAlAs with artificially introduced epitaxial stresses into functional layers. The optimized and fabricated strained SL demonstrates a sub-picosecond photocarrier lifetime of 1.7 ps nevertheless featuring a rather moderate mobility. By means of numerical simulation we observe a decrease in the energy band gap of strained photoconductive layer InGaAs. In addition, the timedomain spectroscopic measurements reveal an increase in the spectrum amplitude of surface THz emission in the strained SL compared to lattice-matched one. We associate the decrease in photocarrier lifetime as well as the increase in the spectrum amplitude with residual strain in the SL caused by epitaxial stresses. The obtained results are of specific interest to THz science community since they open a way toward fabrication of cost-effective THz photoconductive devices for biomedical applications.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. S. Ponomarev, A. E. Yachmenev, I. A. Glinskiy, R. A. Khabibullin, D. I. Khusyainov, A. M. Buryakov, and E. D. Mishina "Strained superlattices InGaAs/InAlAs with ultrashort photocarrier lifetime", Proc. SPIE 11457, Saratov Fall Meeting 2019: Optical and Nano-Technologies for Biology and Medicine, 114571A (9 April 2020); https://doi.org/10.1117/12.2560460
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KEYWORDS
Terahertz radiation

Indium

Superlattices

Indium gallium arsenide

Aluminum

Gallium

Numerical simulations

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