Effect of seed layer thickness on the growth of ZnO nanorods

Madhuri Mishra; Md Jawaid Alam; Subhananda Chakrabarti

doi:10.1117/12.2569017

21 August 2020 Effect of seed layer thickness on the growth of ZnO nanorods

Madhuri Mishra, Md Jawaid Alam, Subhananda Chakrabarti

Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 114651F (2020) https://doi.org/10.1117/12.2569017
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Conference Poster

Abstract

Zinc oxide is a well-known wide bandgap semiconductor material. High exciton energy at room temperature makes it useful in optoelectronic applications. ZnO can be made available in bulk, film and nanostructured form as well. Nanostructures of ZnO have been proven to have augmented optical properties and extensively being used in optoelectronics and sensing applications. Here we have shown the effect of seed layer thickness on the chemical growth of ZnO nanorods. Two samples A and B has been prepared by hydrothermal bath synthesis having seed layer thicknesses of 120 nm and 350 nm, respectively. FEG-SEM images of nanorods revealed longer and high aspect ratio for sample B while sample A showed lower aspect ratio nanorods. XRD results indicate a dominant c-axis oriented (002) plane at around 33.5°. The calculated grain size of Sample A and B were 31.5 nm and 34.4 nm, respectively. Calculated strain values show a compressive strain in the crystal lattice. The Band edge PL peak emission for sample A and B was found to be at 368.74 nm and 368.38 nm at 18 K.

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Madhuri Mishra, Md Jawaid Alam, and Subhananda Chakrabarti "Effect of seed layer thickness on the growth of ZnO nanorods", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114651F (21 August 2020); https://doi.org/10.1117/12.2569017

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