Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Seung Hee Lee; Seokho Moon; Hokyeong Jeong; Dong Yeong Kim; Jong Kyu Kim

doi:10.1117/12.2570856

21 August 2020 Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Seung Hee Lee, Seokho Moon, Hokyeong Jeong, Dong Yeong Kim, Jong Kyu Kim

Author Affiliations +

Proceedings Volume 11466, UV and Higher Energy Photonics: From Materials to Applications 2020; 1146604 (2020) https://doi.org/10.1117/12.2570856
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.

Conference Presentation

Citation Download Citation

Seung Hee Lee, Seokho Moon, Hokyeong Jeong, Dong Yeong Kim, and Jong Kyu Kim "Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing", Proc. SPIE 11466, UV and Higher Energy Photonics: From Materials to Applications 2020, 1146604 (21 August 2020); https://doi.org/10.1117/12.2570856

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