Ultra-steep-slope transistor enabled by an atomic memristive switch

Bojun Cheng; Alexandros Emboras; Elias Passerini; Mila Lewerenz; Marco Eppenberger; Samuel Zumtaugwald; Fabian Ducry; Jan Aeschlimann; Sandip Tiwari; Mathieu Luisier; Juerg Leuthold

doi:10.1117/12.2566679

21 August 2020 Ultra-steep-slope transistor enabled by an atomic memristive switch

Bojun Cheng, Alexandros Emboras, Elias Passerini, Mila Lewerenz, Marco Eppenberger, Samuel Zumtaugwald, Fabian Ducry, Jan Aeschlimann, Sandip Tiwari, Mathieu Luisier, Juerg Leuthold

Author Affiliations +

Proceedings Volume 11467, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII; 114672I (2020) https://doi.org/10.1117/12.2566679
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Conference Poster

Abstract

An ultra-compact 3D memristive atomic switch is co-integrated with a field-effect transistor (FET). The combined devices outperform similar state-of-the-art arrangements. The integrated transistor operates with an extremely sharp switching slope of below 3 mV/dec, low leakage below pA and a high current on/off ratio I_on/I_off < 10⁶. Moreover, our atomic switch features a < 10 ns switching and a < 300 mV operating voltage. Most importantly, the atomic switch has a small footprint of < 10 nm by 10 nm in line with the extreme feature size of the current FET technologies. Thus, this design could addresses the future needs of integrated circuits (ICs) for high integration density at low power consumption.

Conference Presentation

Citation Download Citation

Bojun Cheng, Alexandros Emboras, Elias Passerini, Mila Lewerenz, Marco Eppenberger, Samuel Zumtaugwald, Fabian Ducry, Jan Aeschlimann, Sandip Tiwari, Mathieu Luisier, and Juerg Leuthold "Ultra-steep-slope transistor enabled by an atomic memristive switch", Proc. SPIE 11467, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII, 114672I (21 August 2020); https://doi.org/10.1117/12.2566679

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