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21 August 2020 Exploring defect-induced Raman mode of transition metal dichalcogenides monolayer using tip-enhanced resonance Raman spectroscopy
Mun Seok Jeong
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Proceedings Volume 11468, Enhanced Spectroscopies and Nanoimaging 2020; 114680A (2020) https://doi.org/10.1117/12.2567945
Event: SPIE Nanoscience + Engineering, 2020, Online Only
Abstract
A number of studies of tungsten disulfide (WS2) have been conducted because monolayer WS2 has a relatively high photoluminescence quantum yield. However, the defect-related Raman scattering which determines the quality of monolayer WS2 has been rarely studied. In this study, we perform tip-enhanced Raman scattering experiments for the WS2 monolayer to investigate the defect-induced Raman scattering properties. We demonstrate that the red-shifted A1g mode with the D and D′ modes can be attributed to the defect in monolayer WS2. Furthermore, we also identify that the emergence of new Raman vibrational modes can be induced by sulfur vacancies through the density functional theory calculations.
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Mun Seok Jeong "Exploring defect-induced Raman mode of transition metal dichalcogenides monolayer using tip-enhanced resonance Raman spectroscopy", Proc. SPIE 11468, Enhanced Spectroscopies and Nanoimaging 2020, 114680A (21 August 2020); https://doi.org/10.1117/12.2567945
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KEYWORDS
Raman spectroscopy
Transition metals
Raman scattering
Luminescence
Quantum efficiency
Sulfur
Tungsten
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