Large, Fast, Free-Electron-Induced Optical Nonlinearities

P. A. Wolff; S. Y. Auyang

doi:10.1117/12.962147

4 January 1990 Large, Fast, Free-Electron-Induced Optical Nonlinearities

P. A. Wolff, S. Y. Auyang

Proceedings Volume 1148, Nonlinear Optical Properties of Materials; (1990) https://doi.org/10.1117/12.962147
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

HgTe, HgMnTe, and zero-gap HgCdTe are shown to have record, picosecond speed, optical nonlinearities at 10.6u. The largest occurs in Hg_0.84Cd _o.16T-e, whose X⁽³⁾=2x10^-3 esu at 80K. A theoretical model suggests that these nonlinearities are caused by laser-induced carrier temperature modulation, that produces large carrier density variations in zero-gap materials. The thermal processes have saturation power densities in the 100kW/cm² - 1MW/cm² range. At such intensities, the dielectric constant of HgTe is modulated by about 10%.

Citation Download Citation

P. A. Wolff and S. Y. Auyang "Large, Fast, Free-Electron-Induced Optical Nonlinearities", Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); https://doi.org/10.1117/12.962147

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