On The Magnetic Susceptibility Of The 2D Electroas Of Small-Gap Semiconductors Having Nonlinear Optical Properties

K. P. Ghatak; A. Ghoshal; S. N. Biswas

doi:10.1117/12.962148

4 January 1990 On The Magnetic Susceptibility Of The 2D Electroas Of Small-Gap Semiconductors Having Nonlinear Optical Properties

K. P. Ghatak, A. Ghoshal, S. N. Biswas

Author Affiliations +

Proceedings Volume 1148, Nonlinear Optical Properties of Materials; (1990) https://doi.org/10.1117/12.962148
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

In recent years, with the advent of MBE and MOCVD techniques, there has been considerable interest in studying the physical properties of 2D electron gases in ultra-thin films and inversion layers of semiconductors due to their importance in devifle technology. In the presence of a quantizing magnetic field along z-direction, the free 2D electron motion is also quantized forming Landau levels an&l leading to diamagnetism. Moreover, the twining motion of the electroas generates paramagnetism due to spin-splitting of the Landau levels. We wish to note that considerable efforts have been made in the literature to study the magnetic susceptibility in degenerate semiconductors under different physical conditions. Keeping this in view, an attempt is made for the first time, to study the dia and para magnetic susceptibilities of the 2D electrons under strong. magnetic quantization in ternary chalcopyrite semiconductors which have been widely used as nonlinear optical materialg.

Citation Download Citation

K. P. Ghatak, A. Ghoshal, and S. N. Biswas "On The Magnetic Susceptibility Of The 2D Electroas Of Small-Gap Semiconductors Having Nonlinear Optical Properties", Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); https://doi.org/10.1117/12.962148

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