Particulate and molecular contamination control in EUV-induced H2-plasma in EUV lithographic scanner

Mark van de Kerkhof; Ernst Galutschek; Andrei Yakunin; Selwyn Cats; Christian Cloin

doi:10.1117/12.2569997

23 August 2020 Particulate and molecular contamination control in EUV-induced H₂-plasma in EUV lithographic scanner

Mark van de Kerkhof, Ernst Galutschek, Andrei Yakunin, Selwyn Cats, Christian Cloin

Proceedings Volume 11489, Systems Contamination: Prediction, Control, and Performance 2020; 114890K (2020) https://doi.org/10.1117/12.2569997
Event: SPIE Optical Engineering + Applications, 2020, Online Only

Abstract

In the past year, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is shaped and transmitted through a near-vacuum H2 background gas. This gas is excited into a low-density H2 plasma by the energetic EUV and DUV radiation from the Laser-Produced Plasma (LPP) in the EUV Source. In the vicinity of the walls and mirrors within the scanner system, this creates an environment rather similar to that near the surfaces of objects in space, especially when considered in combination with trace species such as N2, O2, H2O and hydrocarbons. This paper will discuss how insights on electrostatics and charging from astrophysics have been used to build understanding of particulate and molecular contamination, and how these were translated into prevention and control schemes to achieve near-zero contamination levels on critical imaging surfaces, compatible with the stringent manufacturing requirements for 10 nm lithography.

Conference Presentation

Citation Download Citation

Mark van de Kerkhof, Ernst Galutschek, Andrei Yakunin, Selwyn Cats, and Christian Cloin "Particulate and molecular contamination control in EUV-induced H₂-plasma in EUV lithographic scanner", Proc. SPIE 11489, Systems Contamination: Prediction, Control, and Performance 2020, 114890K (23 August 2020); https://doi.org/10.1117/12.2569997

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available