Characteristics Of Hydrogenated Amorphous Silicon-Germanium Films Prepared By Reactively Sputtering

Guanghua Chen; Jinzhang Xu; Fangqing Zhang

doi:10.1117/12.962175

12 December 1989 Characteristics Of Hydrogenated Amorphous Silicon-Germanium Films Prepared By Reactively Sputtering

Guanghua Chen, Jinzhang Xu, Fangqing Zhang

Proceedings Volume 1149, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VIII; (1989) https://doi.org/10.1117/12.962175
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

We have achieved the high quality hydrogenated amorphous silicon-germanium (a-SiGe:H) films with high photo-conductivity (σ_ph=10^-4S/cm, under AM-1) and high photo-sensitivity (σ_ph/σ_d=104) by reactive sputtering. In this paper, we present also the electron spin resonance(ESR)-studies of defects are attributed to Si- and Ge-like dangling bonds of a-SiGe:H films.

Citation Download Citation

Guanghua Chen, Jinzhang Xu, and Fangqing Zhang "Characteristics Of Hydrogenated Amorphous Silicon-Germanium Films Prepared By Reactively Sputtering", Proc. SPIE 1149, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VIII, (12 December 1989); https://doi.org/10.1117/12.962175

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