Fabrication of pn junction type CdTe diode x-ray detector by backside laser doping

Junichi Nishizawa; Volodymyr A. Gnatyuk; Katsuyuki Takagi; Akifumi Koike; Toru Aoki

doi:10.1117/12.2568964

20 August 2020 Fabrication of pn junction type CdTe diode x-ray detector by backside laser doping

Junichi Nishizawa, Volodymyr A. Gnatyuk, Katsuyuki Takagi, Akifumi Koike, Toru Aoki

Proceedings Volume 11494, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXII; 114941C (2020) https://doi.org/10.1117/12.2568964
Event: SPIE Optical Engineering + Applications, 2020, Online Only

Conference Poster

Abstract

We have developed p-n junction CdTe diodes using the laser doping technology for fabrication of more advanced X/gamma-ray detectors. Using backside laser irradiation, it was expected that the laser intensity and number of irradiation shots could be easily regulated to control the charge carrier concentration in a doped CdTe layer. We have used Nd: YAG laser radiation (1064 nm) for which CdTe is transparent. The I-V characteristics and isotope spectra of the produced structures have confirmed expected diode formation of p-n junction CdTe diodes for X gamma-ray detectors.

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Junichi Nishizawa, Volodymyr A. Gnatyuk, Katsuyuki Takagi, Akifumi Koike, and Toru Aoki "Fabrication of pn junction type CdTe diode x-ray detector by backside laser doping", Proc. SPIE 11494, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXII, 114941C (20 August 2020); https://doi.org/10.1117/12.2568964

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