Presentation
10 October 2020 Wide-bandgap photonic integrated circuit (PIC): advances, challenges, and opportunities
Author Affiliations +
Abstract
Photonics systems in the ultra-violet to visible spectral regime are based on wide-bandgap materials and devices. The development of III-Nitride photonic and optoelectronic devices integrated on a monolithic semiconductor platform will enable radical advances in a wide range of applications, including: smart lighting, sensing, imaging, visible-light communications, chip-scale atomic systems (including optical clocks), quantum photonics and quantum communications. In this talk, I’ll present the design, fabrication, and characterization of the monolithic integrated laser diodes together with modulators, amplifiers, and detectors towards wide-bandgap photonic integrated circuits. The challenges and opportunities in seamlessly integrated III-nitride elements enabling photonic IC at the visible wavelength for many critical applications will be discussed.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chao Shen "Wide-bandgap photonic integrated circuit (PIC): advances, challenges, and opportunities", Proc. SPIE 11547, Optoelectronic Devices and Integration IX, 115470I (10 October 2020); https://doi.org/10.1117/12.2575420
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KEYWORDS
Photonic integrated circuits

Modulators

Imaging systems

Modulation

Semiconductor lasers

Telecommunications

Photonic devices

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