Temperature rise and damage morphology of APD in external capacitor circuit irradiated by millisecond pulse laser with different pulse widths

Liang Chen; Hongxu Liu; Guangyong Jin; Di Wang; Zhi Wei

doi:10.1117/12.2576296

5 November 2020 Temperature rise and damage morphology of APD in external capacitor circuit irradiated by millisecond pulse laser with different pulse widths

Liang Chen, Hongxu Liu, Guangyong Jin, Di Wang, Zhi Wei

Author Affiliations +

Proceedings Volume 11562, AOPC 2020: Advanced Laser Technology and Application; 115620J (2020) https://doi.org/10.1117/12.2576296
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

In this paper, the surface temperature rise and damage morphology of biased Si avalanche photodiodes (APDs) fabricated in external capacitor circuit irradiated by 1.0ms and 1.5ms pulse width laser are studied. The effects of external capacitance on surface temperature rise and damage morphology of APD irradiated by pulsed laser under different laser energy densities were compared and analyzed. Compared with the absence of external capacitance, the existence of external capacitance reduces the surface temperature of Si-APD and has a certain impact on the damage morphology. The results show that under the same external capacitance and laser energy density, the surface temperature rise of APD treated by 1.5ms pulsed laser is lower than that of 1.0ms pulsed laser, and the surface temperature rise of APD decreases with the decrease of external capacitance.The results show that the existence of external capacitance can further improve the laser damage resistance of Si-APD.

Citation Download Citation

Liang Chen, Hongxu Liu, Guangyong Jin, Di Wang, and Zhi Wei "Temperature rise and damage morphology of APD in external capacitor circuit irradiated by millisecond pulse laser with different pulse widths", Proc. SPIE 11562, AOPC 2020: Advanced Laser Technology and Application, 115620J (5 November 2020); https://doi.org/10.1117/12.2576296

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