Progress and challenges of EUV patterning material design

Anuja De Silva

doi:10.1117/12.2582476

22 February 2021 Progress and challenges of EUV patterning material design

Anuja De Silva

Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090G (2021) https://doi.org/10.1117/12.2582476
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

The development of EUV lithography has been enabled by the resist material design which had initially adapted of known concepts from DUV lithography. But with the low number of photon counts in EUV has brought stochastics defects as a significant concern to enable yield. This paper will review the development on resist concepts that have targeted limiting variations in resist design to mitigate stochastic defects. The limits of this trade-off between improving stochastics-related defects with a higher dose will also be discussed. How strongly does the resist formulation itself contribute to stochastics, or is it a purely dose-driven effect? Along with the resist the patterning stack has a more significant effect in EUV patterning Due to the thickness decrease in the resist and the underlying stack, the interfacial effects of the resist and hardmask films play a dominant factor in the material stochastics. This offers an opportunity to think differently about underlayer design for sub-32nm pitch patterning. The choice of hardmask can be used to modulate post-litho defectivity to mitigate the stochastics effects and enable more efficient pattern transfer. This paper will address multiple approaches to improving the materials stochastics through resist component optimization and hardmask film development. It will also demonstrate how the methodology of defectivity at post-exposure and post-etch are correlated to electrical yield to validate material evaluations

Conference Presentation

Citation Download Citation

Anuja De Silva "Progress and challenges of EUV patterning material design", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090G (22 February 2021); https://doi.org/10.1117/12.2582476

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KEYWORDS

Optical lithography

Extreme ultraviolet

Stochastic processes

Deep ultraviolet

Extreme ultraviolet lithography

Lithography

Modulation

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