Moiré effect-based overlay target design for OPO improvements

Dieter Van den Heuvel; Philippe Leray; Eitan Hajaj; Diana Shaphirov; Eltsafon Ashwal; Chen Dror; Raviv Yohanan; Mark Ghinovker; Katya Gordon; Zephyr Liu; Xiaolei Liu; Roel Gronheid; Hedvi Spielberg

doi:10.1117/12.2585876

22 February 2021 Moiré effect-based overlay target design for OPO improvements

Dieter Van den Heuvel, Philippe Leray, Eitan Hajaj, Diana Shaphirov, Eltsafon Ashwal, Chen Dror, Raviv Yohanan, Mark Ghinovker, Katya Gordon, Zephyr Liu, Xiaolei Liu, Roel Gronheid, Hedvi Spielberg

Author Affiliations +

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 1161125 (2021) https://doi.org/10.1117/12.2585876
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

As design nodes of advanced semiconductor chips shrink, reduction in on-product overlay (OPO) budget becomes more critical to achieving higher yield. Imaging-based overlay (IBO) targets usually consist of periodic patterns where their pitches are resolvable with visible light microscopy. The difference between the feature dimensions of the device and the optical target is growing as device design nodes shrink. To make the optical target emulate the device as much as possible, the target’s feature periodicity is reduced. Using this approach, the process impact on the device is simulated on the overlay target which enables a more accurate measurement on grid (target) in terms of OPO matching. To further optimize IBO performance, a new moiré effect based robust Advanced Imaging Mode (rAIM™) target design was developed. This rAIM IBO target is implemented using significantly smaller pitches compared to the standard AIM® target, resulting in a more device-like target design. In this paper we investigate the benefits of the optical improvement, manifested as the target gain, and the process compatibility benefits to improve the target accuracy, robustness, and measurability to meet overlay (OVL) basic performance requirements, such as total measurement uncertainty (TMU).

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Dieter Van den Heuvel, Philippe Leray, Eitan Hajaj, Diana Shaphirov, Eltsafon Ashwal, Chen Dror, Raviv Yohanan, Mark Ghinovker, Katya Gordon, Zephyr Liu, Xiaolei Liu, Roel Gronheid, and Hedvi Spielberg "Moiré effect-based overlay target design for OPO improvements", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 1161125 (22 February 2021); https://doi.org/10.1117/12.2585876

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