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5 March 2021 Eu-doped GaN-based red LED for ultrahigh-resolution micro-LED displays
Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 1168615 (2021) https://doi.org/10.1117/12.2577199
Event: SPIE OPTO, 2021, Online Only
Abstract
Development of an efficient red LED based on GaN is pivotal to ultra-small-size, full-color, and high-resolution micro-LED displays. In a red LED using Eu-doped GaN (GaN:Eu), the peak position of the emission is extremely stable against ambient temperature and injected current. Photoluminescence quantum efficiency of the Eu emission was investigated as a function of chip size of square structures. Even for sizes smaller than 24 µm, an influence of sidewall-related non-radiative recombination of carriers on the quantum efficiency was only minor as a result of limited carrier diffusion lengths in GaN:Eu. We also demonstrated monolithic vertically stacked full-color LEDs consisting of GaN:Eu and InGaN quantum wells. These results indicate a high potential of the GaN:Eu LED for the micro-LED applications.
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Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, and Jun Tatebayashi "Eu-doped GaN-based red LED for ultrahigh-resolution micro-LED displays", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168615 (5 March 2021); https://doi.org/10.1117/12.2577199
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KEYWORDS
Light emitting diodes
LED displays
Europium
Gallium nitride
Quantum efficiency
High dynamic range imaging
Indium gallium nitride
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