High-temperature growth of high-purity AlN layers on AlN substrates by HVPE

Nao Takekawa; Ken Goto; Toru Nagashima; Reo Yamamoto; Junji Kotani; Yoshinao Kumagai

doi:10.1117/12.2577988

5 March 2021 High-temperature growth of high-purity AlN layers on AlN substrates by HVPE

Nao Takekawa, Ken Goto, Toru Nagashima, Reo Yamamoto, Junji Kotani, Yoshinao Kumagai

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861F (2021) https://doi.org/10.1117/12.2577988
Event: SPIE OPTO, 2021, Online Only

Abstract

High-temperature AlN homoepitaxial growth up to 1600℃ by HVPE was investigated. High-purity AlN with excellent crystallinity was reported where HVPE-AlN was homoepitaxially grown on the PVT-AlN substrate. However, quartz-derived impurities incorporation was slightly problematic in the HVPE-AlN. In this study, a new reactor was introduced that is a quartz glass reactor including a high-temperature growth zone constructed with heat-resistant materials. O and Si impurity incorporation was reduced with high growth rates of around 150 μm/h by the newly introduced high-temperature growth system. This work was partially supported by Innovative Science and Technology Initiative for Security Grant Number JPJ004596, ATLA, Japan.

Conference Presentation

Citation Download Citation

Nao Takekawa, Ken Goto, Toru Nagashima, Reo Yamamoto, Junji Kotani, and Yoshinao Kumagai "High-temperature growth of high-purity AlN layers on AlN substrates by HVPE", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861F (5 March 2021); https://doi.org/10.1117/12.2577988

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Aluminum nitride

Silicon

Crystals

Quartz

Aluminum

Glasses

Manufacturing

Show All Keywords

RELATED CONTENT

Thickness impact of aluminum and silicon on bow of silicon...
Proceedings of SPIE (March 11 2008)

Measurement of convective temperature fluctuations in free silicon melt zones
Proceedings of SPIE (July 06 1999)

Quartz - The Ultimate Mask Material For Optical Lithography?
Proceedings of SPIE (June 30 1982)

Electrical conductivity of the polycrystalline films of p-terphenyl
Proceedings of SPIE (April 08 1999)

Influence of internal structure on electrical properties of 1,4 cis...
Proceedings of SPIE (June 13 1997)

Investigation of free and strained germanium whiskers at cryogenic temperatures
Proceedings of SPIE (April 17 2001)

Numerical demonstration of MEMS strain sensor
Proceedings of SPIE (April 03 2012)

Subscribe to Digital Library

Receive Erratum Email Alert

Show All Keywords

Keywords/Phrases

Search In:

Publication Years