Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping

Tomoyuki Tanikawa; Mayuko Tsukakoshi; Masahiro Uemukai; Ryuji Katayama

doi:10.1117/12.2584794

9 March 2021 Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping

Tomoyuki Tanikawa, Mayuko Tsukakoshi, Masahiro Uemukai, Ryuji Katayama

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861Z (2021) https://doi.org/10.1117/12.2584794
Event: SPIE OPTO, 2021, Online Only

Abstract

We present principle of defect characterization of GaN using multiphoton-excitation photoluminescence and several experimental results. Threading dislocations and basal plane dislocations in n-type GaN are observed from near-band-edge emission imaging. The diameters of dark spots and dark lines are determined by the minority carrier diffusion length. Three-dimensional feature of dark lines is different by the Burgers vectors of dislocations. Based on these properties, nondestructive classification of dislocations is possible. Simultaneous detection of near-band-edge emission and yellow luminescence can be utilized to visualize three-dimensional growth processes such as facet-initiated epitaxial lateral overgrowth, which is used to obtain GaN substrates with low threading dislocation densities.

Conference Presentation

Citation Download Citation

Tomoyuki Tanikawa, Mayuko Tsukakoshi, Masahiro Uemukai, and Ryuji Katayama "Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861Z (9 March 2021); https://doi.org/10.1117/12.2584794

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