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6 March 2021 Band structures and heterojunction alignment of ScAlN alloy
Hanlin Fu, Justin C. Goodrich, Nelson Tansu
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 1168623 (2021) https://doi.org/10.1117/12.2579138
Event: SPIE OPTO, 2021, Online Only
Abstract
The band structure and band alignment for ScxAl1-xN /AlN heterojunctions, with Sc-content x up to 25%, are investigated via first principle density functional theory (DFT) calculations. The supercell approach is utilized to build the crystal structure of ScAlN and AlN alloys and we investigate the natural band offsets of ScxAl1-xN relative to AlN through the potential line-up method. Our calculations suggest a type-I ScAlN / GaN heterostructure with large band offsets. The implementation of ScAlN will have impacts for deep ultraviolet, power electronics, and laser devices.
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Hanlin Fu, Justin C. Goodrich, and Nelson Tansu "Band structures and heterojunction alignment of ScAlN alloy", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168623 (6 March 2021); https://doi.org/10.1117/12.2579138
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KEYWORDS
Heterojunctions
Gallium nitride
Optical alignment
Aluminum nitride
Optoelectronic devices
Crystals
Quantum wells
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