Zinc oxide solution-processed Schottky diodes operating at 5G frequencies

Dimitra G. Georgiadou; James Semple; Abhay Sagade; Thomas Anthopoulos

doi:10.1117/12.2589491

5 March 2021 Zinc oxide solution-processed Schottky diodes operating at 5G frequencies

Dimitra G. Georgiadou, James Semple, Abhay Sagade, Thomas Anthopoulos

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 1168717 (2021) https://doi.org/10.1117/12.2589491
Event: SPIE OPTO, 2021, Online Only

Abstract

5G networks are currently being deployed around the world, introducing a new era in machine-to-machine communications and reinforcing the Internet of Things. The 5G radiofrequency bands range from sub-1 GHz to 70 GHz, while the 6th generation (6G) is expected to cover bands at hundreds of GHz. There is a need for devices with high frequency performance and scalable manufacturing using inexpensive techniques and materials. Herein we present ZnO-based Schottky diodes, processed from solution on wafer scale with high yield. Coplanar nanogap electrodes are fabricated using a high-throughput low-cost technique, named adhesion lithography. The diodes’ cutoff frequency exceeds 100 GHz.

Conference Presentation

Citation Download Citation

Dimitra G. Georgiadou, James Semple, Abhay Sagade, and Thomas Anthopoulos "Zinc oxide solution-processed Schottky diodes operating at 5G frequencies", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 1168717 (5 March 2021); https://doi.org/10.1117/12.2589491

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