Black phosphorus optoelectronics for mid-infrared silicon photonics

Chang-Hua Liu

doi:10.1117/12.2578209

5 March 2021 Black phosphorus optoelectronics for mid-infrared silicon photonics

Chang-Hua Liu

Proceedings Volume 11688, 2D Photonic Materials and Devices IV; 1168803 (2021) https://doi.org/10.1117/12.2578209
Event: SPIE OPTO, 2021, Online Only

Abstract

In this paper, we will outline the architectures of light emitting diode using black phosphorus-based van der Waals heterostructures. The demonstrated device can emit mid-infrared light, ranging from 3 to 4 μm, within the technologically important mid-infrared atmospheric window, and its emission is linearly polarized with the degree of polarization ~ 75%. Additionally, the device can perform high quantum efficiency, high bias voltage operation, fast modulation speed as well as long term stability. By leveraging the integrability of van der Waals materials, we further demonstrate our developed black phosphorus-based light emitting diode can be assembled with a mid-infrared silicon waveguide, which promises for midinfrared silicon photonics applications.

Conference Presentation

Citation Download Citation

Chang-Hua Liu "Black phosphorus optoelectronics for mid-infrared silicon photonics", Proc. SPIE 11688, 2D Photonic Materials and Devices IV, 1168803 (5 March 2021); https://doi.org/10.1117/12.2578209

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