Presentation + Paper
5 March 2021 Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions
I. Charlet, L. Deniel, P. Acosta-Alba, Y. Désières, S. Guerber, S. Kerdilès, J. Lassarre, C. Perrot, C. Euvrard-Colnat, K. Ribaud, P. Grosse, M. Gregoire, K. Rovayaz, L. Mazet, S. Cremer, N. Vulliet, S. Monfray, S. Messaoudène, D. Marris-Morini, F. Boeuf
Author Affiliations +
Abstract
Silicon photonic modulators are a key component for electro-optic transmitter within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in Mach-Zehnder interferometer have become the most popular solution. Accumulation–based capacitive modulators are an efficient approach, which can reduce the modulation power consumption. In this work we study the behavior of capacitive modulators with polycrystalline silicon to form the capacitance. The modulators are made within the standard fabrication flow with only few add-ons. In this work we show that furnace annealing conditions and excimer laser annealing conditions during the polycrystalline silicon formation enhance the modulator bandwidths.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Charlet, L. Deniel, P. Acosta-Alba, Y. Désières, S. Guerber, S. Kerdilès, J. Lassarre, C. Perrot, C. Euvrard-Colnat, K. Ribaud, P. Grosse, M. Gregoire, K. Rovayaz, L. Mazet, S. Cremer, N. Vulliet, S. Monfray, S. Messaoudène, D. Marris-Morini, and F. Boeuf "Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions", Proc. SPIE 11691, Silicon Photonics XVI, 116910R (5 March 2021); https://doi.org/10.1117/12.2577806
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KEYWORDS
Modulators

Silicon

Annealing

Silicon photonics

Optoelectronics

Oxides

Transceivers

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