Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions

I. Charlet; L. Deniel; P. Acosta-Alba; Y. Désières; S. Guerber; S. Kerdilès; J. Lassarre; C. Perrot; C. Euvrard-Colnat; K. Ribaud; P. Grosse; M. Gregoire; K. Rovayaz; L. Mazet; S. Cremer; N. Vulliet; S. Monfray; S. Messaoudène; D. Marris-Morini; F. Boeuf

doi:10.1117/12.2577806

5 March 2021 Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions

I. Charlet, L. Deniel, P. Acosta-Alba, Y. Désières, S. Guerber, S. Kerdilès, J. Lassarre, C. Perrot, C. Euvrard-Colnat, K. Ribaud, P. Grosse, M. Gregoire, K. Rovayaz, L. Mazet, S. Cremer, N. Vulliet, S. Monfray, S. Messaoudène, D. Marris-Morini, F. Boeuf

Author Affiliations +

Proceedings Volume 11691, Silicon Photonics XVI; 116910R (2021) https://doi.org/10.1117/12.2577806
Event: SPIE OPTO, 2021, Online Only

Abstract

Silicon photonic modulators are a key component for electro-optic transmitter within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in Mach-Zehnder interferometer have become the most popular solution. Accumulation–based capacitive modulators are an efficient approach, which can reduce the modulation power consumption. In this work we study the behavior of capacitive modulators with polycrystalline silicon to form the capacitance. The modulators are made within the standard fabrication flow with only few add-ons. In this work we show that furnace annealing conditions and excimer laser annealing conditions during the polycrystalline silicon formation enhance the modulator bandwidths.

Conference Presentation

Citation Download Citation

I. Charlet, L. Deniel, P. Acosta-Alba, Y. Désières, S. Guerber, S. Kerdilès, J. Lassarre, C. Perrot, C. Euvrard-Colnat, K. Ribaud, P. Grosse, M. Gregoire, K. Rovayaz, L. Mazet, S. Cremer, N. Vulliet, S. Monfray, S. Messaoudène, D. Marris-Morini, and F. Boeuf "Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions", Proc. SPIE 11691, Silicon Photonics XVI, 116910R (5 March 2021); https://doi.org/10.1117/12.2577806

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available