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5 March 2021 High-data-rate photothermal effect graphene detector integrated in a SOI waveguide
Marco Romagnoli, Simone Marconi, Marco A. Giambra, Alberto Montanaro, Vaidotas Mišeikis, Stefano Soresi, Stefano Tirelli, Paola Galli, Fred Buchali, Wolfgang Templ, Camilla Coletti, Vito Sorianello
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Proceedings Volume 11711, Broadband Access Communication Technologies XV; 1171106 (2021) https://doi.org/10.1117/12.2584531
Event: SPIE OPTO, 2021, Online Only
Abstract
Graphene has been proposed to be integrated with Si Photonics because of its very high mobility, fast carrier dynamics and ultra-broadband optical properties. High speed graphene photodetectors have been demonstrated so far, however the most are based on the photo-bolometric or photo-conductive effect. These devices are characterized by large dark current, in the order of milli-Amperes. Photothermal effect (PTE) photodetectors can be used in voltage detection mode with no dark current, it is ultra fast and it operates near zero-bias. Graphene PTE-based photodetectors have been reported so far but high-speed optical telecommunication signal detection has not been shown yet. Here, we report on a graphene PTE-based photodetector on SOI waveguide. Thanks to the optimized design we show a direct detection of 105Gb/s non-return to zero (NRZ) and 120Gb/s 4-level pulse amplitude modulation (PAM) optical signals.
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Marco Romagnoli, Simone Marconi, Marco A. Giambra, Alberto Montanaro, Vaidotas Mišeikis, Stefano Soresi, Stefano Tirelli, Paola Galli, Fred Buchali, Wolfgang Templ, Camilla Coletti, and Vito Sorianello "High-data-rate photothermal effect graphene detector integrated in a SOI waveguide", Proc. SPIE 11711, Broadband Access Communication Technologies XV, 1171106 (5 March 2021); https://doi.org/10.1117/12.2584531
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KEYWORDS
Graphene
Photothermal effect
Waveguides
Photodetectors
Sensors
Signal detection
Silicon
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