The thermo-optic phase shifters (TOPS) have been widely used in the applications of sensing, lidar and neural network on the SOI platform. We present a comparison of TOPS based on TiN metal, silicide and N-type doped silicon, which were fabricated by the CUMEC SOI process on the same SOI die. The average switching power (Pπ) of these TOPS are19.12 mW, 21.75 mW and 21.96 mW, respectively. In addition, the switching time of these three types of TOPS have been tested under 10 KHz square wave, the rise and drop time are 5.90 μs and 8.97 μs, 12.90μs and 4.00 μs, 12.80μs and 2.60μs, respectively. Moreover, the minimum possible distance between adjacent TOPS was also examined, which is beneficial to the application of the TOPS in large-scale compact network.
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