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1 August 2021 Impact of strain on 2D perovskite carrier dynamics
Daniel C. Ratchford, Vanessa M. Breslin, Elizabeth S. Ryland, Junghoon Yeom, Robert B. Balow, Blake S. Simpkins, Paul A. Brown, Jeffrey C. Owrutsky, Adam D. Dunkelberger
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Proceedings Volume 11799, Physical Chemistry of Semiconductor Materials and Interfaces XX; 117990H (2021) https://doi.org/10.1117/12.2594271
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
2D perovskites, consisting of alternating layers of metal halide sheets and cations, tend to be more environmentally robust compared to their bulk 3D counterpart and have broad technological appeal because of their tunable mechanical, optical, and electrical properties. While these materials have promise for flexible optoelectronic applications, it is necessary to determine the impact of strain on the perovskite optical and electronic properties. Here, we discuss our work in understanding how strain modifies the carrier dynamics of 2D perovskites using time resolved spectroscopy. We compare the photoluminescence lifetime of two different 2D perovskite materials, synthesized using either phenethylammonium or butylammonium cations. Both perovskite materials exhibit about a 50% decrease in the lifetime for tensile strains <1%. The decrease in the photoluminescence lifetime, indicating a decrease in the charge carrier lifetime, is discussed in relation the materials defect states and bands
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Daniel C. Ratchford, Vanessa M. Breslin, Elizabeth S. Ryland, Junghoon Yeom, Robert B. Balow, Blake S. Simpkins, Paul A. Brown, Jeffrey C. Owrutsky, and Adam D. Dunkelberger "Impact of strain on 2D perovskite carrier dynamics", Proc. SPIE 11799, Physical Chemistry of Semiconductor Materials and Interfaces XX, 117990H (1 August 2021); https://doi.org/10.1117/12.2594271
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KEYWORDS
Perovskite
Carrier dynamics
Luminescence
Metals
Optoelectronics
Photovoltaics
Pollution control
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