A self-consistent phase field computational study on resistive switching devices: switching mechanisms and retention losses

Foroozan Koushan; Nobuhiko P. Kobayashi

doi:10.1117/12.2595075

1 August 2021 A self-consistent phase field computational study on resistive switching devices: switching mechanisms and retention losses

Foroozan Koushan, Nobuhiko P. Kobayashi

Author Affiliations +

Proceedings Volume 11800, Low-Dimensional Materials and Devices 2021; 118000J (2021) https://doi.org/10.1117/12.2595075
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States

Abstract

There exist a myriad of experimental studies on resistive switching devices that consist of a dielectric film inserted between a pair of electrodes. These resistive switching devices display reversible multi-state switching behaviors pertinent to a range of applications including neuromorphic computing. However, coherent understanding of physical and chemical origins of their distinctive electrical properties has yet to be completed and needs to be further investigated to improve overall performance and endurance of resistive switching devices. In this paper, phase-field methodology was used to study the formation and annihilation of electrically conducting channels in a dielectric film of a resistive switching device. The study focuses on the progressive evolution of domains made of electrical charges – charge clusters – under the influence of spatially varying electric-field and temperature. The study also sheds light on the retention loss – a degradation by which resistive switching

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Foroozan Koushan and Nobuhiko P. Kobayashi "A self-consistent phase field computational study on resistive switching devices: switching mechanisms and retention losses", Proc. SPIE 11800, Low-Dimensional Materials and Devices 2021, 118000J (1 August 2021); https://doi.org/10.1117/12.2595075

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