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In this work we argue that the electron skew scattering on paramagnetic impurities in non-magnetic semiconductors possesses a remarkable fingerprint, allowing us to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and itinerant carriers leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, and propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device, which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization-independent terms in the Hall voltage.
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Konstantin Denisov, Mikhail Rakitskii, Igor Rozhansky, "Spin-independent features of the skew scattering on paramagnetic impurities in semiconductors," Proc. SPIE 11805, Spintronics XIV, 118051O (1 August 2021); https://doi.org/10.1117/12.2595580