Presentation
1 August 2021 Spin-independent features of the skew scattering on paramagnetic impurities in semiconductors
Author Affiliations +
Abstract
In this work we argue that the electron skew scattering on paramagnetic impurities in non-magnetic semiconductors possesses a remarkable fingerprint, allowing us to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and itinerant carriers leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, and propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device, which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization-independent terms in the Hall voltage.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Konstantin Denisov, Mikhail Rakitskii, and Igor Rozhansky "Spin-independent features of the skew scattering on paramagnetic impurities in semiconductors", Proc. SPIE 11805, Spintronics XIV, 118051O (1 August 2021); https://doi.org/10.1117/12.2595580
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KEYWORDS
Scattering

Semiconductors

Electrons

Magnetism

Spin polarization

Ferromagnetics

Magnetic semiconductors

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