In this talk, we present our methodology for both in-situ and operando X-ray characterization of full PSC device stacks. These methods were developed, in collaboration with researchers at SLAC and NREL, initially to study the device properties of MAPbI3 as a function of temperature. Since then, these methods have been applied to understand the phase stability of mixed A-site PSCs of the form XPbI3 where X = FA, Cs, and/or MA. More recently we have explored tin−lead PSCs devices, to better understand diminished device performance upon thermal treatment. This work showed a stable bulk structure of the perovskite absorber, suggesting that the degradation mechanism is dominated by the surface chemistry. This talk will provide a summary of the operando methods developed as well as a report on these past and more recent results.
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