III-V semiconductor mid-infrared interband cascade light emitters and detectors

Andreas Bader; Luca Steinbrecher; Florian Rothmayr; Yaksh Rawal; Fabian Hartmann; Andreas Pfenning; Sven Höfling

doi:10.1117/12.2599140

1 August 2021 III-V semiconductor mid-infrared interband cascade light emitters and detectors

Andreas Bader, Luca Steinbrecher, Florian Rothmayr, Yaksh Rawal, Fabian Hartmann, Andreas Pfenning, Sven Höfling

Proceedings Volume 11830, Infrared Remote Sensing and Instrumentation XXIX; 118300E (2021) https://doi.org/10.1117/12.2599140
Event: SPIE Optical Engineering + Applications, 2021, San Diego, California, United States

Abstract

We present recent work on III-V semiconductor mid-infrared light emitters and detectors. The employed type-II broken bandgap alignment between InAs and Ga_xIn_1-xSb allows for widely tunable emission and absorption wavelengths with energies below the individual material bandgaps. We demonstrate room temperature operation of GaSb-based interband cascade lasers (ICLs) emitting between 6.1 and 6.9 μm. Furthermore, we investigate ideal growth conditions for InAs/GaSb type-II superlattices (T2SL) for the implementation in interband cascade detectors (ICDs) with cut-off wavelengths up to 7.5 μm at room temperature. We focus on strain balancing different SL compositions for different cutoff wavelengths via Sb-soak and sub-monolayer (SML) growth of InSb. An ideal growth temperature of T_Sub=430 °C is found by comparing the quality of different sets of samples by means of high-resolution X-ray diffractometry (HRXRD) and room temperature photoluminescence (PL) measurements.

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Citation Download Citation

Andreas Bader, Luca Steinbrecher, Florian Rothmayr, Yaksh Rawal, Fabian Hartmann, Andreas Pfenning, and Sven Höfling "III-V semiconductor mid-infrared interband cascade light emitters and detectors", Proc. SPIE 11830, Infrared Remote Sensing and Instrumentation XXIX, 118300E (1 August 2021); https://doi.org/10.1117/12.2599140

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