Stochastic effects in chemically amplified resists used for extreme ultraviolet lithography

Takahiro Kozawa

doi:10.1117/12.2601798

29 September 2021 Stochastic effects in chemically amplified resists used for extreme ultraviolet lithography

Takahiro Kozawa

Proceedings Volume 11854, International Conference on Extreme Ultraviolet Lithography 2021; 118540Q (2021) https://doi.org/10.1117/12.2601798
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only

Abstract

In the development of highly resolving and highly sensitive resist materials, stochastic phenomena (LER and stochastic defect generation) are a critical issue. In this study, the dependences of chemical gradient (an indicator of LER) on the half-pitch of line-and-space patterns, the thermalization distance of secondary electrons, EUV optical contrast, the photoacid generator (PAG) concentration, the photodecomposable quencher (PDQ) concentration, and the effective reaction radius for deprotection were investigated using a simulation on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists. The relationships between resolution, LER, and sensitivity were formulated in terms of thermalization distance.

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Takahiro Kozawa "Stochastic effects in chemically amplified resists used for extreme ultraviolet lithography", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540Q (29 September 2021); https://doi.org/10.1117/12.2601798

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KEYWORDS

Stochastic processes

Line edge roughness

Chemically amplified resists

Extreme ultraviolet

Extreme ultraviolet lithography

Molecules

Polymers

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