Effects of external optical feedback in InAs/InP quantum dot frequency comb lasers on silicon

Thibaut Renaud; Heming Huang; Di Liang; Geza Kurczveil; R. G. Beausoleil; Frédéric Grillot

doi:10.1117/12.2608949

4 March 2022 Effects of external optical feedback in InAs/InP quantum dot frequency comb lasers on silicon

Thibaut Renaud, Heming Huang, Di Liang, Geza Kurczveil, R. G. Beausoleil, Frédéric Grillot

Proceedings Volume 11995, Physics and Simulation of Optoelectronic Devices XXX; 119950C (2022) https://doi.org/10.1117/12.2608949
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

On-chip integration of semiconductor lasers have shown a growing interest in recent years, especially for the development of photonic integrated circuits (PICs) which are of paramount importance for high-speed communication within and between data centers, and fast on-board data exchanges. For all these applications, a key challenge remains the stability of the laser sources integrated on a PIC in presence of external optical feedback with the view to avoid integrated bulky and costly optical isolation. In this study, the effects of external optical feedback are investigated in hybrid InAs/InP quantum dot comb lasers on silicon. The design of the cavity includes a semiconductor optical amplifier section, a saturable absorber and an on-chip external cavity incorporating a vertical coupler. We measured the resulting feedback properties with respect to the operation conditions (bias current and voltage) and to the length of the saturable absorber. We show that under most operating conditions, the laser remains stable against optical feedback, only few regimes of operation occur, which either improve or degrade the frequency comb and/or the radio-frequency beatnote power of the laser.

Conference Presentation

Citation Download Citation

Thibaut Renaud, Heming Huang, Di Liang, Geza Kurczveil, R. G. Beausoleil, and Frédéric Grillot "Effects of external optical feedback in InAs/InP quantum dot frequency comb lasers on silicon", Proc. SPIE 11995, Physics and Simulation of Optoelectronic Devices XXX, 119950C (4 March 2022); https://doi.org/10.1117/12.2608949

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