Physical simulation of perovskite/silicon three-terminal tandems based on bipolar transistor structure

Gemma Giliberti; Federica Cappelluti

doi:10.1117/12.2609510

4 March 2022 Physical simulation of perovskite/silicon three-terminal tandems based on bipolar transistor structure

Proceedings Volume 11996, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI; 1199602 (2022) https://doi.org/10.1117/12.2609510
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Tandem solar cells made of organometal halide perovskite and crystalline silicon cells are one of the most promising routes towards high efficiency low cost photovoltaics. Among the possible architectures, monolithic three-terminal tandems hold the promise of the highest energy/cost figure of merit, by combining the advantage of two- and four-terminal approaches. Recently, three-terminal perovskite/silicon tandems have been reported, based on interdigitated back contact heterojunction silicon cells. Alternative solutions that can be integrated with double-sided contact silicon cells are worth to be investigated in view of their higher compatibility with industrial mass production. In this work, we present a simulation-based proof-of-concept of PVK/Si threeterminal tandem cells that use a heterostructure bipolar transistor structure. The extra terminal is implemented at the common selective layer between the perovskite and silicon subcells, avoiding the use of any recombination layer or tunneling junction. We demonstrate promising device performance through physics-based simulations preliminarily validated against experimental data of other perovskite/silicon tandem technologies reported in literature.

Conference Presentation

Citation Download Citation

Gemma Giliberti and Federica Cappelluti "Physical simulation of perovskite/silicon three-terminal tandems based on bipolar transistor structure", Proc. SPIE 11996, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI, 1199602 (4 March 2022); https://doi.org/10.1117/12.2609510

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