Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain

Daniel Burt; Hyo-Jun Joo; Youngmin Kim; Yongduck Jung; Melvina Chen; Manlin Luo; Dong-Ho Kang; Simone Assali; Lin Zhang; Bongkwon Son; Weijun Fan; Oussama Moutanabbir; Zoran Ikonic; Chuan Seng Tan; Yi-Chiau Huang; Donguk Nam

doi:10.1117/12.2608742

5 March 2022 Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain

Daniel Burt, Hyo-Jun Joo, Youngmin Kim, Yongduck Jung, Melvina Chen, Manlin Luo, Dong-Ho Kang, Simone Assali, Lin Zhang, Bongkwon Son, Weijun Fan, Oussama Moutanabbir, Zoran Ikonic, Chuan Seng Tan, Yi-Chiau Huang, Donguk Nam

Author Affiliations +

Proceedings Volume 12006, Silicon Photonics XVII; 1200605 (2022) https://doi.org/10.1117/12.2608742
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Combining Sn alloying and tensile strain to Ge has emerged as the most promising engineering approach to create an efficient Si-compatible lasing medium. The residual compressive strain in GeSn has thus far made the simple geometrical strain amplification technique unsuitable for achieving tensile strained GeSn. Herein, by utilizing two unique techniques, we report the introduction of a uniaxial tensile strain directly into GeSn micro/nanostructures. By converting GeSn from indirect to direct bandgap material via tensile strain, we achieve a 10-fold increase in the light emission intensity.

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Daniel Burt, Hyo-Jun Joo, Youngmin Kim, Yongduck Jung, Melvina Chen, Manlin Luo, Dong-Ho Kang, Simone Assali, Lin Zhang, Bongkwon Son, Weijun Fan, Oussama Moutanabbir, Zoran Ikonic, Chuan Seng Tan, Yi-Chiau Huang, and Donguk Nam "Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain", Proc. SPIE 12006, Silicon Photonics XVII, 1200605 (5 March 2022); https://doi.org/10.1117/12.2608742

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