Presentation + Paper
3 March 2022 635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power
K. Paschke, G. Blume, H. Wenzel, J. Pohl, M. Matalla, D. Feise, P. Ressel, A. Sahm, J. Glaab, B. Sumpf
Author Affiliations +
Proceedings Volume 12024, Advances in Display Technologies XII; 120240A (2022) https://doi.org/10.1117/12.2607548
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
High radiance red-emitting light sources are required for several laser applications such as flying-spot-displays or high resolution microscopy. As many of such applications are moving out of the lab into industrial environment there is a high demand for small sized, efficient and reliable laser sources, for which semiconductor lasers are preferred. The red-emitting tapered diode lasers presented here, emit up to 1 W of optical power with a nearly diffraction limited beam at 635 nm. A preliminary lifetime test yielded more than 2000 h at a power level of 500 mW.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Paschke, G. Blume, H. Wenzel, J. Pohl, M. Matalla, D. Feise, P. Ressel, A. Sahm, J. Glaab, and B. Sumpf "635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power", Proc. SPIE 12024, Advances in Display Technologies XII, 120240A (3 March 2022); https://doi.org/10.1117/12.2607548
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KEYWORDS
Semiconductor lasers

Near field

Waveguides

Cladding

Reflectivity

Beam quality measurement

Energy conversion efficiency

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