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26 May 2022 Spatial frequency analysis of LER and LWR to tune SADP process
Jason Yang, Chris Mack, Regina Freed
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Proceedings Volume 12053, Metrology, Inspection, and Process Control XXXVI; 120531J (2022) https://doi.org/10.1117/12.2619415
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
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Abstract
In the SADP process, the final spacer line roughness is the key challenge for good pattern transfer. To understand how each process step contributes, the role of roughness in different frequency ranges (Low, Middle, High) is extremely important and it was thoroughly analyzed using unbiased power spectral densities. In this way, it was possible to observe that the deposition step introduces Low to Middle frequency LWR. By tweaking the thin film stress levels during deposition, it is observed that LWR of the final CD of the spacer line can be improved further after the etch step. Applying proper etch step tuning, the etch power condition optimization can reduce line wiggling (responsible for Low frequency LER), while gas flow adjustment can minimize residue from re-deposition (and therefore improve Middle frequency LER). Using the insights in frequency range enabled rapid reduction of LER and LWR by focusing the development methods in both deposition and etch.
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Jason Yang, Chris Mack, and Regina Freed "Spatial frequency analysis of LER and LWR to tune SADP process", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 120531J (26 May 2022); https://doi.org/10.1117/12.2619415
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KEYWORDS
Line width roughness
Line edge roughness
Etching
Spatial frequencies
Thin films
Lithography
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