Presentation + Paper
30 May 2022 Geiger-mode avalanche photodiode arrays fabricated on SOI engineered-substrates
Author Affiliations +
Abstract
Arrays of Geiger-mode avalanche photodiodes (GmAPDs) are fabricated on a new type of engineered substrates with an epitaxial layer grown on silicon-on-insulator (SOI) wafers. The SOI-based structure facilitates rapid die-level bump bonding of the GmAPD array to a CMOS readout integrated circuit (ROIC) followed by substrate removal to make a backilluminated image sensor. To fabricate the engineered substrate, a commercial substrate with a 70-nm-thick SOI layer is implanted with BF2 ions to create a p+-doped passivation layer on the light illumination surface. Subsequently, a lightly p-doped silicon layer on which the GmAPD will be fabricated is grown using a homoepitaxy process. This approach allows for the use of chip-level hybridization to CMOS, avoiding the high cost and demanding wafer flatness and smoothness requirements of wafer-scale 3D integration processes. The new process yields cleaner wafers and allows for tighter control of detector layer thickness compared to the previous process. GmAPDs fabricated on 5-μm-thick epitaxial silicon have over 70% photon detection efficiency (PDE) when 532 nm light is focused into the center 3 μm of the device with an oxide layer that remains after substrate removal. With an anti-reflective coating, the PDE can be improved.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin K. Ryu, Brian F. Aull, Michael Collins, Noah Pestana, Joseph Ciampi, Rabindra Das, Kevan Donlon, Hermanus Pretorius, Meera Punjiya, Alex McIntosh, and Erik K Duerr "Geiger-mode avalanche photodiode arrays fabricated on SOI engineered-substrates", Proc. SPIE 12089, Advanced Photon Counting Techniques XVI, 120890C (30 May 2022); https://doi.org/10.1117/12.2618610
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KEYWORDS
Semiconducting wafers

Silicon

Readout integrated circuits

Wafer bonding

Avalanche photodiodes

Sensors

LIDAR

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