The HOT of SW, MW, LWIR and VLWIR photodetectors and imagers are highly desirable for different applications such as earth science and astronomy, remote sensing, optical communication, and thermal and medical imaging.
The Sb based Materials and gap -engineered Type-II superlattices (T2SLs) has drawn a lot of attention since it was introduced in 1970 by Leo Esaki et al, , for infrared detection as a system of multi‐interacting quantum wells. T2SL material system has experienced incredible improvements in design, gap and atomic engineering, high quality materials , device structure designs and device fabrication process, which elevated the performances of T2SL‐based photodetectors to a comparable or superior level to the state‐of‐the‐ art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). As a pioneer in the field, center for quantum devices (CQD) has been involved in growth, design, characterization, and introduction of Sb based Bulk and T2SL material system for infrared photodetection and imaging from deep UV to THZ . This talk will present the power of Sb based materials innovation for breaking spectral and performance barriers for HOT photodetectors and Imagers from deep UV to THZ. at CQD/NU.
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