Electrical properties of photosensitive ZnO/Si heterostructure depending on temperature

Dmytro P. Koziarskyi; Eduard V. Maistruk; Ivan P. Koziarskyi; Galyna O. Andrushchak

doi:10.1117/12.2616088

20 December 2021 Electrical properties of photosensitive ZnO/Si heterostructure depending on temperature

Dmytro P. Koziarskyi, Eduard V. Maistruk, Ivan P. Koziarskyi, Galyna O. Andrushchak

Proceedings Volume 12126, Fifteenth International Conference on Correlation Optics; 121261S (2021) https://doi.org/10.1117/12.2616088
Event: Fifteenth International Conference on Correlation Optics, 2021, Chernivtsi, Ukraine

Abstract

The transmission spectra of ZnO:Al films and I-V-characteristic of the isotype heterojunction ZnO:Al/n-Si fabricated by the method of RF magnetron sputtering of thin ZnO:Al films onto n-Si crystalline substrates were investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse biases are analyzed. The influence of temperature on the parameters of the heterojunction is determined. The photoelectric properties of the heterostructure are analyzed.

Citation Download Citation

Dmytro P. Koziarskyi, Eduard V. Maistruk, Ivan P. Koziarskyi, and Galyna O. Andrushchak "Electrical properties of photosensitive ZnO/Si heterostructure depending on temperature", Proc. SPIE 12126, Fifteenth International Conference on Correlation Optics, 121261S (20 December 2021); https://doi.org/10.1117/12.2616088

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