Electric-field poling of silicon nitride waveguides for the linear phase modulation

Boris Zabelich; Edgars Nitiss; Anton Stroganov; Camille-Sophie Brès

doi:10.1117/12.2617189

25 May 2022 Electric-field poling of silicon nitride waveguides for the linear phase modulation

Boris Zabelich, Edgars Nitiss, Anton Stroganov, Camille-Sophie Brès

Proceedings Volume 12143, Nonlinear Optics and its Applications 2022; 1214308 (2022) https://doi.org/10.1117/12.2617189
Event: SPIE Photonics Europe, 2022, Strasbourg, France

Abstract

Stoichiometric silicon nitride (Si₃N₄) constitutes a mature platform for integrated photonics. Its pertinent properties, including wide transparency window from the visible to the mid-IR, low propagation loss, and high third-order nonlinearity, are exploited in many linear and nonlinear applications. However, due to the centrosymmetric nature of the Si₃N₄, the absence of the second-order susceptibility (χ⁽²⁾) impedes a realization of three-wave mixing processes as well as the linear electro-optic effect, relevant for many applications on an optical chip. Here, we implement the electric-field poling technique to induce the effective χ⁽²⁾ inside a Si₃N₄ waveguide, thus enabling the linear electro-optic modulation. Using numerical simulations, we estimated the concentration and the diffusion coefficient of the charges responsible for the space-charge electric field formation. In addition, the DC third-order susceptibility of Si₃N₄ previously unknown in the literature is measured using a free-space Mach-Zehnder interferometer.

Conference Presentation

Citation Download Citation

Boris Zabelich, Edgars Nitiss, Anton Stroganov, and Camille-Sophie Brès "Electric-field poling of silicon nitride waveguides for the linear phase modulation", Proc. SPIE 12143, Nonlinear Optics and its Applications 2022, 1214308 (25 May 2022); https://doi.org/10.1117/12.2617189

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