Methods to achieve Ohmic contact to p-GaN

Ye Cao

doi:10.1117/12.2628557

16 February 2022 Methods to achieve Ohmic contact to p-GaN

Ye Cao

Proceedings Volume 12164, International Conference on Optoelectronic Materials and Devices (ICOMD 2021); 121641N (2022) https://doi.org/10.1117/12.2628557
Event: 2021 International Conference on Optoelectronic Materials and Devices, 2021, Guangzhou, China

Abstract

In this review, the mechanism of LED light emission and the formation of barrier height on GaN-based semiconductor are analyzed, which affects the device electrical properties. After explanation of Ohmic contact physics, to achieve Ohmic contact to p-type GaN is considered as the rather difficult work. The method to improve the conductivity of contact to pGaN is concluded. The surface treatment is suggested to remove insulating native oxide on GaN surface while the annealing in oxygen ambient may have multiple effects on p-GaN structure or active carrier concentration, although the mechanism of annealing is still a controversial issue. Ni with Au cap layer is a popular scheme for p-GaN but the property could be further improved via the formation of solid solution with other divalent metal or those extracting hydrogen. Finally, the use of superlattice/strained layer like AlGaN or InGaN could create 2-D hole gas, which further boosts the carrier concentration.

Citation Download Citation

Ye Cao "Methods to achieve Ohmic contact to p-GaN", Proc. SPIE 12164, International Conference on Optoelectronic Materials and Devices (ICOMD 2021), 121641N (16 February 2022); https://doi.org/10.1117/12.2628557

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