High-power InGaAsP/InP superluminescent diodes

Richard J. Fu; Eric Y. Chan; Dan J. Booher; Chi-Shain Hong

doi:10.1117/12.18251

1 May 1990 High-power InGaAsP/InP superluminescent diodes

Richard J. Fu, Eric Y. Chan, Dan J. Booher, Chi-Shain Hong

Author Affiliations +

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18251
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

High power superluminescent diodes (SLD) with buried crescent heterostructure have been successfully developed. The output power as high as 10 mW at 180 mA and the spectral width as wide as 30 nm are achieved. The fabrication and performance characteristics of these diodes are described. Good far field patterns are obtained in both directions. Measured I-V, L-I and emission spectrum are presented.

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Richard J. Fu, Eric Y. Chan, Dan J. Booher, and Chi-Shain Hong "High-power InGaAsP/InP superluminescent diodes", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18251

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