Presentation + Paper
29 August 2022 2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy
Michael E. Hoenk, April D. Jewell, Gillian Kyne, John Hennessy, Todd Jones, Samuel Cheng, Shouleh Nikzad, David Morris, Katherine Lawrie, Jesper Skottfelt
Author Affiliations +
Abstract
In this paper we review the physics and performance of back-illuminated CCDs. Models of back-illuminated CCDs are used to derive requirements for stable, strong surface passivation in space-relevant environments. Models and data are used to compare state-of-the-art surface passivation methods with 2D-doped surfaces. MBE growth of 2D-doped silicon on back-illuminated CCDs and CMOS image sensors enables near 100% charge collection efficiency with exceptional stability in space and other harsh environments. Lifetime tests performed on 2D-doped CMOS image sensors using pulsed DUV lasers have demonstrated the unique stability of 2D-doped detectors against high levels of radiation-induced surface damage. The insensitivity of 2D-doped detectors to Si-SiO2 traps has facilitated the development of a variety of coatings and filters with science-enabling capabilities for NASA instruments and missions in the far and near ultraviolet spectral range. We discuss the status and goals of a strategic partnership between JPL and Teledyne e2v for the certification of 2Ddoping processes, and report initial results from our collaboration.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael E. Hoenk, April D. Jewell, Gillian Kyne, John Hennessy, Todd Jones, Samuel Cheng, Shouleh Nikzad, David Morris, Katherine Lawrie, and Jesper Skottfelt "2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy", Proc. SPIE 12191, X-Ray, Optical, and Infrared Detectors for Astronomy X, 1219113 (29 August 2022); https://doi.org/10.1117/12.2631542
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KEYWORDS
Sensors

Charge-coupled devices

Quantum efficiency

Silicon

Interfaces

Ultraviolet radiation

Semiconducting wafers

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