Recent progress in the development of grating-gate InGaAs-channel HEMTs for fast and sensitive THz detection

A. Satou; T. Otsuji

doi:10.1117/12.2633618

30 September 2022 Recent progress in the development of grating-gate InGaAs-channel HEMTs for fast and sensitive THz detection

A. Satou, T. Otsuji

Author Affiliations +

Proceedings Volume 12230, Terahertz Emitters, Receivers, and Applications XIII; 122300I (2022) https://doi.org/10.1117/12.2633618
Event: SPIE Optical Engineering + Applications, 2022, San Diego, California, United States

Abstract

We review recent progress in the development of grating-gate plasmonic THz detectors based on InGaAs-channel high-electron- mobility transistors for fast, highly sensitive, room-temperature-operating THz detection. First, a 2D diffraction grating structure, instead of the conventional 1D grating structure, was proposed for realization of polarization-independent detection and was experimentally demonstrated to alter the polarization characteristic of output photoresponse drastically. Second, it was demonstrated that a new way to read the output photovoltage from the gate of a detector simultaneously enables the scaling of the photovoltage with the active area size and the impedance matching with 50-Ω interconnection systems, which were the main issues in the conventional drain-readout configuration. Third, a significant enhancement of the photovoltage was observed at a positive gate bias voltage application in the gate-readout configuration, due to the “3D rectification effect" originating from the heterobarrier between the InGaAs channel layer and InAlAs spacer/carrier-supply/ barrier layers.

Conference Presentation

Citation Download Citation

A. Satou and T. Otsuji "Recent progress in the development of grating-gate InGaAs-channel HEMTs for fast and sensitive THz detection", Proc. SPIE 12230, Terahertz Emitters, Receivers, and Applications XIII, 122300I (30 September 2022); https://doi.org/10.1117/12.2633618

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