Paper
1 December 2022 High-power LPP-EUV source for semiconductor HVM: lithography and other applications
Author Affiliations +
Abstract
Gigaphoton has developed LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies including; combination of pulsed CO2 laser and Sn droplets, dual wavelength pico second laser pulses for shooting and debris mitigation by magnetic field have been applied. We have demonstrated high average power CO2 laser more than 25kW at output power in cooperation with Mitsubishi Electric. Pilot#1 demonstrated HVM capability; <300W operation data (short-term) and actual collector mirror reflectivity degradation rate is less than 0.15%/Gp by using real collector mirror around 125W (at I/F clean) in burst power < 10 Billion pulses operation. Long-term operation over 270W is also successful. Also we are developing small LPP light source for new application. I will report this new LPP light source at the conference.
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Hakaru Mizoguchi, Hiroaki Nakarai, Yasutsugu Usami, Kouji Kakizaki, Junichi Fujimoto, and Takashi Saitou "High-power LPP-EUV source for semiconductor HVM: lithography and other applications", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 122920X (1 December 2022); https://doi.org/10.1117/12.2657787
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KEYWORDS
Extreme ultraviolet

Mirrors

Deep ultraviolet

Light sources

Lithography

Carbon dioxide lasers

Laser systems engineering

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