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Acousto-optic modulators were fabricated on the GaAs substrates. Low loss hetero- structure GaAs/AlGaAs waveguides of 0.8 dB/cm at 1.3 pm wavelength have been fabricated by the use of the MBE method. ZnO film was then deposited on the waveguides by r.f. sput- tering. A pair of interdigital transducers (IDTs) was made on the ZnO/GaAs waveguides using conventional photolithography and lift-off technique. The total insertion loss measured at a central frequency of 25.37 MHz was 20 dB. Fresnel lens was used to focus and collimate the laser beams. The Ge photodiodes were used attached to the A-O devices as the detectors. Finally the integrated A-0 modulators were made and studied.
Y. K. Su
"Fabrication of acousto-optic modulators on GaAs substrates", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 123004 (1 July 1990); https://doi.org/10.1117/12.2294641
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Y. K. Su, "Fabrication of acousto-optic modulators on GaAs substrates," Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 123004 (1 July 1990); https://doi.org/10.1117/12.2294641